Published in Angew Chem Int Ed Engl on July 05, 2011
Hydrogen multicentre bonds. Nat Mater (2006) 2.12
Shallow versus deep nature of Mg acceptors in nitride semiconductors. Phys Rev Lett (2012) 1.37
Fully ab initio finite-size corrections for charged-defect supercell calculations. Phys Rev Lett (2009) 1.15
Defect formation energies without the band-gap problem: combining density-functional theory and the GW approach for the silicon self-interstitial. Phys Rev Lett (2009) 0.89
First-principles optical spectra for F centers in MgO. Phys Rev Lett (2012) 0.86
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN. J Chem Phys (2011) 0.85
First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO. Phys Rev Lett (2012) 0.80
Sources of electrical conductivity in SnO2. Phys Rev Lett (2008) 0.79
Phonon-assisted optical absorption in silicon from first principles. Phys Rev Lett (2012) 0.78
The role of native defects in the transport of charge and mass and the decomposition of Li4BN3H10. Phys Chem Chem Phys (2014) 0.75
Transport properties of KTaO3 from first-principles. J Phys Condens Matter (2016) 0.75
Decomposition mechanism and the effects of metal additives on the kinetics of lithium alanate. Phys Chem Chem Phys (2012) 0.75
Role of atomic multiplets in the electronic structure of rare-earth semiconductors and semimetals. Phys Rev Lett (2009) 0.75
Fundamental limits on the electron mobility of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>. J Phys Condens Matter (2017) 0.75
Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. Opt Express (2013) 0.75
Hydrogen passivation of impurities in Al(2)O(3). ACS Appl Mater Interfaces (2014) 0.75