|
1
|
Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithography.
|
Nanotechnology
|
2010
|
1.09
|
|
2
|
Understanding phase-change behaviors of carbon-doped Ge₂Sb₂Te₅ for phase-change memory application.
|
ACS Appl Mater Interfaces
|
2014
|
1.08
|
|
3
|
Particle size and surfactant effects on chemical mechanical polishing of glass using silica-based slurry.
|
Appl Opt
|
2010
|
0.96
|
|
4
|
Si-Sb-Te materials for phase change memory applications.
|
Nanotechnology
|
2011
|
0.96
|
|
5
|
Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material.
|
Proc Natl Acad Sci U S A
|
2011
|
0.90
|
|
6
|
Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode.
|
Nanotechnology
|
2008
|
0.90
|
|
7
|
Synthesis and low-temperature photoluminescence properties of SnO2 nanowires and nanobelts.
|
Nanotechnology
|
2006
|
0.83
|
|
8
|
Understanding the crystallization behavior of as-deposited Ti-Sb-Te alloys through real-time radial distribution functions.
|
Nanoscale
|
2015
|
0.79
|
|
9
|
Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer.
|
Nanoscale Res Lett
|
2013
|
0.75
|
|
10
|
Design of side bottom-electrode-contact for high density phase-change memory array.
|
J Nanosci Nanotechnol
|
2012
|
0.75
|
|
11
|
Dry etching of nanosized Ge1Sb2Te4 patterns using TiN hard mask for high density phase-change memory.
|
J Nanosci Nanotechnol
|
2009
|
0.75
|
|
12
|
Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.
|
Nanotechnology
|
2017
|
0.75
|
|
13
|
Rapid flame synthesis of internal Mo(6+) doped TiO2 nanocrystals in situ decorated with highly dispersed MoO3 clusters for lithium ion storage.
|
Nanoscale
|
2015
|
0.75
|
|
14
|
Negative photoconductivity and memory effects of germanium nanocrystals embedded in HfO2 dielectric.
|
J Nanosci Nanotechnol
|
2006
|
0.75
|
|
15
|
O-doped Si2Sb2Te5 nano-composite phase change material for application of chalcogenide random access memory.
|
J Nanosci Nanotechnol
|
2009
|
0.75
|
|
16
|
Reversible Phase Change Characteristics of Cr-Doped Sb2Te3 Films with Different Initial States Induced by Femtosecond Pulses.
|
ACS Appl Mater Interfaces
|
2016
|
0.75
|
|
17
|
Femtosecond laser-induced crystallization of amorphous Ga-Sb-Se films and coherent phonon dynamics.
|
Opt Express
|
2012
|
0.75
|
|
18
|
Femtosecond laser-irradiated crystallization of amorphous Si2Sb2Te3 films and its in-situ characterization by coherent phonon spectroscopy.
|
Opt Express
|
2013
|
0.75
|
|
19
|
Study on the crystallization process of GaSb-Sb2Te3 pseudobinary films for phase-change random access memory.
|
J Nanosci Nanotechnol
|
2013
|
0.75
|
|
20
|
Reactive ion etching of Si(x)Sb2Te in CF4/Ar plasma for nonvolatile phase-change memory device.
|
J Nanosci Nanotechnol
|
2013
|
0.75
|
|
21
|
Low-consumption phase change material with good data retention selected from SbxTe.
|
J Nanosci Nanotechnol
|
2010
|
0.75
|
|
22
|
The construction of Si 2 Sb 2 Te 5 electrical probe storage based on UV nanoimprint lithography.
|
Nanotechnology
|
2009
|
0.75
|