PubRank

Songlin Feng

Author PubWeight™ 3.38‹?›

Top papers

Rank Title Journal Year PubWeight™‹?›
1 Understanding phase-change behaviors of carbon-doped Ge₂Sb₂Te₅ for phase-change memory application. ACS Appl Mater Interfaces 2014 1.08
2 Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode. Nanotechnology 2008 0.90
3 Detection of trace organophosphorus vapor with a self-assembled bilayer functionalized SiO2 microcantilever piezoresistive sensor. Anal Chim Acta 2006 0.87
4 Band structures and band gaps of liquid surface waves propagating through an infinite array of cylinders. Phys Rev E Stat Nonlin Soft Matter Phys 2003 0.83
5 Understanding the crystallization behavior of as-deposited Ti-Sb-Te alloys through real-time radial distribution functions. Nanoscale 2015 0.79
6 The provenance study of Chinese ancient architectonical colored glaze by INAA. Appl Radiat Isot 2008 0.75
7 Low-consumption phase change material with good data retention selected from SbxTe. J Nanosci Nanotechnol 2010 0.75
8 Design of side bottom-electrode-contact for high density phase-change memory array. J Nanosci Nanotechnol 2012 0.75
9 The temporal coherence improvement of the two-dimensional negative-index slab image. Opt Express 2006 0.75
10 Dry etching of nanosized Ge1Sb2Te4 patterns using TiN hard mask for high density phase-change memory. J Nanosci Nanotechnol 2009 0.75
11 O-doped Si2Sb2Te5 nano-composite phase change material for application of chalcogenide random access memory. J Nanosci Nanotechnol 2009 0.75
12 Reversible Phase Change Characteristics of Cr-Doped Sb2Te3 Films with Different Initial States Induced by Femtosecond Pulses. ACS Appl Mater Interfaces 2016 0.75
13 Application of three-step epitaxial process to dual trench epitaxial diode array. J Nanosci Nanotechnol 2013 0.75
14 Reactive ion etching of Si(x)Sb2Te in CF4/Ar plasma for nonvolatile phase-change memory device. J Nanosci Nanotechnol 2013 0.75