A high-mobility electronic system at an electrolyte-gated oxide surface.

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Published in Nat Commun on March 12, 2015

Authors

Patrick Gallagher1, Menyoung Lee1, Trevor A Petach1, Sam W Stanwyck2, James R Williams1, Kenji Watanabe3, Takashi Taniguchi3, David Goldhaber-Gordon1

Author Affiliations

1: Department of Physics, Stanford University, Stanford, California 94305, USA.
2: Department of Applied Physics, Stanford University, Stanford, California 94305, USA.
3: Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

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