Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides.

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Published in Nat Commun on September 18, 2015

Authors

Galan Moody1, Chandriker Kavir Dass1, Kai Hao1, Chang-Hsiao Chen2, Lain-Jong Li3, Akshay Singh1, Kha Tran1, Genevieve Clark4,5, Xiaodong Xu4,5, Gunnar Berghäuser6, Ermin Malic7, Andreas Knorr6, Xiaoqin Li1

Author Affiliations

1: Department of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, Texas 78712, USA.
2: Department of Automatic Control Engineering, Feng Chia University, Taichung 40724, Taiwan.
3: Physical Science and Engineering Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955, Saudi Arabia.
4: Department of Physics, University of Washington, Seattle, Washington 98195, USA.
5: Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, USA.
6: Institut f. Theoretische Physik, Nitchlineare Optik und Quantenelektronik, Technische Universität Berlin, 10623 Berlin, Germany.
7: Department of Applied Physics, Chalmers University of Technology, Gothenburg, Sweden.

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