PubRank

Fabrication and Enhanced Photoelectrochemical Performance of MoS2/S-Doped g-C3N4 Heterojunction Film.

PubWeight™: 0.79‹?›

🔗 View Article (PMID 26864284)

Published in ACS Appl Mater Interfaces on February 18, 2016

Authors

Lijuan Ye1, Dan Wang2, Shijian Chen1

Author Affiliations

1: School of Physics, Chongqing University , Shapingba, Chongqing 401331, People's Republic of China.
2: School of media and mathematics & Physics, Jilin Engineering Normal University , Changchun 130052, People's Republic of China.

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Simple and Large Scale Construction of MoS2-g-C3N4 Heterostructures Using Mechanochemistry for High Performance Electrochemical Supercapacitor and Visible Light Photocatalytic Applications. Sci Rep (2017) 0.79